Silicon and germanium are two semiconductor materials. There are two types of semiconductor materials viz. P type material and N type material. P type material has holes that are positively charged and N type material have electrons that are negatively charged. These two type of materials are suitable joined together to form the PN junction diode.
Depletion layer: the region where P type and N type material is joined is called as junction (meeting point). As these materials are of opposite type and its tendency to attract opposite charges, same applies here also. holes from p side get attracted towards n type material and electrons from n side get attracted towards p type material. this is called as diffusion process and the region covered diffusion is called as depletion layer. Depletion layer creates barrier potential which restricts further recombination of holes and electrons due to attraction.
Peak inverse voltage (PIV): it is the maximum reverse (inverse) voltage with which PN junction diode can work without damaging its juntion.
Knee voltage: it is the point on output characteristics of PN junction diode from which current starts to increase sharply.
PN junction diode is made up of semiconductor material like silicon and/or germanium. mostly silicon semiconductor material is used. PN junction diode can be used in rectifier circuit, clipper circuit, clamper circuit, laboratory power supplies, as a switch etc. it is used in forward and reverse bias. in forward bias, it is used as closed switch and in reverse bias, as a open switch. there are some parameters related to the output characteristics of diode that are knee voltage/point from where current start to increase sharply, breakdown, peak inverse voltage aka PIV which is maximum reverse voltage with which diode can withstand without damaging its junction.PN Junction diode Experiment to plot V-I characteristics. forward voltage is given in the steps of 0.1v and forward current is measured. following video is made to ease the concept.
Silicon and germanium are two semiconductor materials. There are two types of semiconductor materials viz. P type material and N type material. P type material has holes that are positively charged and N type material have electrons that are negatively charged. These two type of materials are suitable joined together to form the PN junction diode.
Depletion layer: the region where P type and N type material is joined is called as junction (meeting point). As these materials are of opposite type and its tendency to attract opposite charges, same applies here also. holes from p side get attracted towards n type material and electrons from n side get attracted towards p type material. this is called as diffusion process and the region covered diffusion is called as depletion layer. Depletion layer creates barrier potential which restricts further recombination of holes and electrons due to attraction.
Peak inverse voltage (PIV): it is the maximum reverse (inverse) voltage with which PN junction diode can work without damaging its juntion.
Knee voltage: it is the point on output characteristics of PN junction diode from which current starts to increase sharply.
PN junction diode is made up of semiconductor material like silicon and/or germanium. mostly silicon semiconductor material is used. PN junction diode can be used in rectifier circuit, clipper circuit, clamper circuit, laboratory power supplies, as a switch etc. it is used in forward and reverse bias. in forward bias, it is used as closed switch and in reverse bias, as a open switch. there are some parameters related to the output characteristics of diode that are knee voltage/point from where current start to increase sharply, breakdown, peak inverse voltage aka PIV which is maximum reverse voltage with which diode can withstand without damaging its junction.PN Junction diode Experiment to plot V-I characteristics. forward voltage is given in the steps of 0.1v and forward current is measured. following video is made to ease the concept.
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